How 3D NAND Stacks Up
Report No. FI-NFL-3DM-0114, January 2014
The NAND flash industry is at a technology inflection point. Planar floating gate NAND flash memory is facing fundamental scaling challenges with the upcoming 16nm node the last generation of planar technology. What's next?
Samsung's August 2013 announcement of the production of a 24-layer vertical string V-NAND shows the way forward. Vertical NAND or 3D NAND promises to continue increases in storage capacities and lower cost per bit necessary to enable emerging applications such as solid state drives and cold flash.
In the 2D planar era, the basic underlying floating gate technology (with a few exceptions) was essentially the same amongst all the NAND flash manufacturers. However in the 3D era, all NAND flash memory manufacturers are developing different 3D architectures.
How 3D NAND Stacks Up compares the 3D NAND alternatives and provides an independent view of the challenges, advantages and disadvantages of the various implementations and illuminates the 3D NAND status of the major industry players.
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