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Key NAND Flash Memory Design Intellectual Property - Abstract

Report No. FI-NFL-IPD-0709 July, 2009

Technical innovations, particularly in NAND flash memory design are key enablers of multi-level cell NAND flash memories, especially 3-bit per cell and 4-bit per cell technologies. This report identifies important intellectual property related to sensing architectures, source voltage noise compensation, programming algorithms, disturbs reduction, temperature compensation, high voltage switch, coding schemes and error correction codes from Hynix, Micron, Samsung, SanDisk, STMicroelectronics and Toshiba.

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